(China (Mainland))
Product Summary
The W27E257-10 is a high-speed, low-power Electrically Erasable and Programmable Read Only Memory organized as 32768×8 bits that operates on a single 5 volt power supply. The W27E257-10 provides an electrical chip erase function.
Parametrics
Absolute maximum ratings: (1)Ambient Temperature with Power Applied: -55 to +125 ℃; (2)Storage Temperature: -65 to +125 ℃; (3)Voltage on all pins with Respect to Ground Except VPP, A9 and VCC pins: -0.5 to VCC +0.5 V; (4)Voltage on VPP Pin with Respect to Ground: -0.5 to +14.5 V; (5)Voltage on A9 Pin with Respect to Ground: -0.5 to +14.5 V; (6)Voltage on VCC Pin with Respect to Ground: -0.5 to +7 V.
Features
Features: (1)High speed access time: 100/120/150 nS (max.); (2)Read operating current: 15 mA (typ.); (3)Erase/Programming operating current 1 mA (typ.); (4)Standby current: 5 mA (typ.); (5)Single 5V power supply; (6)+14V erase/+12V programming voltage; (7)Fully static operation; (8)All inputs and outputs directly TTL/CMOS compatible; (9)Three-state outputs; (10)Available packages: 28-pin 600 mil DIP and 32-pin PLCC.
Diagrams
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 W27E010 |
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W27E02 |
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W27E020 |
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Negotiable |
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W27E040 |
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W27E257 |
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Negotiable |
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W27E512 |
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Negotiable |
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