Product Summary

The MHW930 is an UHF Silicon FET Power Amplifier. The MHW930 is Designed specifically for the Pan European Digital Extended EGSM base station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt supply and requires 60 mW of RF input power.

Parametrics

MHW930 absolute:(1)DC Supply Voltage:28 Vdc; (2)DC Bias Voltage:28 Vdc; (3)RF Input Power:22 dBm; (4)RF Output Power :50 W; (5)Operating Case Temperature Range:–10 to +100 °C; (6)Storage Temperature Range:–30 to +100 °C.

Features

MHW930 features :(1)VS = 26 Vdc; (2)VBIAS = 26 Vdc; (3)TC = +25°C; (4)50 W system.

Diagrams

MHW930 INTEL diagram

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