(China (Mainland))
Product Summary
The M29W800DT70N6E is an 8-Mbit (1 Mbit × 8 or 512 Kbits × 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The M29W800DT70N6E is offered in SO44, TSOP48 (12 × 20 mm) and TFBGA48 6 × 8 mm (0.8 mm pitch) packages. The memory is supplied with all the bits erased.
Parametrics
M29W800DT70N6E absolute maximum ratings: (1)TBIAS Temperature under bias: min=-50℃, max=125℃; (2)TSTG Storage temperature: min=-65℃, max=150℃; (3)VIO Input or output voltage: min=-0.6V, max=VCC + 0.6 V; (4)VCC Supply voltage: min=-0.6V, max=4V; (5)VID Identification voltage: min=-0.6V, max=13.5V.
Features
M29W800DT70N6E features: (1)Supply voltage: VCC = 2.7 V to 3.6 V for program, erase and read; (2)Access times: 45, 70, 90 ns; (3)Programming time: 10 μs per byte/word typical; (4)19 memory blocks: 1 boot block (top or bottom location); 2 parameter and 16 main blocks; (5)Program/erase controller: Embedded byte/word program algorithms; (6)Erase suspend and resume modes: Read and program another block during erase suspend; (7)Unlock bypass program command: Faster production/batch programming.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 M29W800DT70N6E |
STMicroelectronics |
Flash STD FLASH 8 MEG |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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