IRF150

IRF150, N–CHANNEL POWER MOSFET, 100V, 0.055ohm, 38A, TO-204AA/AE

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Price:: US $1.50~2.20 / piece [Get Latest Price]

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PartNumber:: IRF150

Brand:: International Rectifier - IR | Pack: TO | D/C: 09+

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Products Upload time: 2012-07-24

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Product Summary

The IRF150 is an N–Channel power mosfet. The IRF150 technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The IRF150 also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Applications of the the IRF150 such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Parametrics

IRF150 absolute maximum ratings :(1)ID ＠ VGS = 10V, TC = 25℃ Continuous Drain Current 38A; (2)ID ＠VGS = 10V, TC = 100℃ Continuous Drain Current 24A; (3)IDM Pulsed Drain Current① 152A; (4)PD ＠TC = 25℃ Max. Power Dissipation 150 W; (5)Linear Derating Factor 1.2 W/℃; (6)VGS Gate-to-Source Voltage ±20 V; (7)EAS Single Pulse Avalanche Energy ②150 mJ; (8)IAR Avalanche Current ①38 A; (9)EAR Repetitive Avalanche Energy ① 15 mJ; (10)dv/dt Peak Diode Recovery dv/dt ③ 5.5 V/ns; (11)TJ Operating Junction -55 to 150℃; (12)TSTG Storage Temperature Range; (13)Lead Temperature 300℃ (0.063 in. (1.6mm) from case for 10s); (14)Weight 11.5 g(typical) .

Features

IRF150 features :(1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.